Thin film InGaAs MSM photodetectors integrated onto silicon-on-insulator waveguide circuits

Silicon-on-insulator (SOI) is rapidly emerging as a versatile platform for a variety of integrated nanophotonic components. High density waveguide circuits can be fabricated using standard CMOS processing techniques. However, light detection in the near-infrared wavelength range (1550 nm) is not possible in silicon which is naturally transparent in this region. One possibility for overcoming this is the integration of III-V semiconductors. We present simulation results of a very compact thin film InGaAs metal-semiconductor-metal (MSM) detector integrated on an SOI waveguide. These photodetectors can be fabricated on a wafer scale and efficiencies of +90% are predicted for wavelengths up to 1650 nm.